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FJE3303H2
FJE3303H2
GP BJT FJE3303H2
onsemi
FJE3303H2
--
Diodes, Transistors and Thyristors
GP BJT
FJE3303H2.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain14@0.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)9
Maximum Collector Base Voltage (V)700
Maximum Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1@0.1A@0.5A|1.2@0.25A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.1A@0.5A|1@0.25A@1A|3@0.5A@1.5A
Description
Trans GP BJT NPN 400V 1.5A 3-Pin(3+Tab) TO-126 Bulk
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