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GP BJT 2N3440UA
Microchip Technology
2N3440UA
--
Diodes, Transistors and Thyristors
GP BJT
2N3440UA.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.9(Max)
Package Length3.93(Max)
Product CategoryBipolar Power
Supplier PackageUA
Standard Package NameUA
Minimum DC Current Gain40@20mA@10V|30@2mA@10V|10@0.2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)250
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 250V 1A 800mW 4-Pin UA Waffle
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