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MSB1218A-RT1G
MSB1218A-RT1G
GP BJT MSB1218A-RT1G
onsemi
MSB1218A-RT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT-323
Minimum DC Current Gain210@2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@100mA
Description
Trans GP BJT PNP 45V 0.1A 150mW 3-Pin SC-70 T/R
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