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2N3811U
2N3811U
GP BJT 2N3811U
Microchip Technology
2N3811U
--
Diodes, Transistors and Thyristors
GP BJT
2N3811U.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width6.35(Max)
Package Height2.03(Max)
Package Length4.45(Max)
Product CategoryBipolar Small Signal
Supplier PackageCase U
Minimum DC Current Gain75@1uA@5V|225@10uA@5V|300@100uA@5V|300@1mA@5V|250@10mA@5V
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)0.7@10uA@100uA|0.8@100uA@1mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@10uA@100uA|0.25@100uA@1mA
Description
Trans GP BJT PNP 60V 0.05A 350mW 6-Pin Case U
Product Compliance
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