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2N3846
2N3846
GP BJT 2N3846
Microchip Technology
2N3846
--
Diodes, Transistors and Thyristors
GP BJT
2N3846.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingStud
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed3
ConfigurationSingle
Package Width22.23(Max)
Package Height26.16(Max)
Package Length25.65(Max)
Product CategoryBipolar Power
Supplier PackageTO-63
Minimum DC Current Gain12@10A@3V|40@5A@3V|70@1A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)4000
Maximum DC Collector Current (A)20
Maximum Emitter Base Voltage (V)10
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.3@1.6A@10A
Maximum Collector-Emitter Saturation Voltage (V)0.75@1.6A@10A
Description
Trans GP BJT NPN 200V 20A 3-Pin TO-63
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