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2N4123TA
2N4123TA
GP BJT 2N4123TA
onsemi
2N4123TA
--
Diodes, Transistors and Thyristors
GP BJT
2N4123TA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
Lead ShapeFormed
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain50@2mA@1V|25@50mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)250(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)0.95@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@5mA@50mA
Description
Trans GP BJT NPN 30V 0.2A 3-Pin TO-92 Ammo
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