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2N4449U
2N4449U
GP BJT 2N4449U
Microchip Technology
2N4449U
--
Diodes, Transistors and Thyristors
GP BJT
2N4449U.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Product CategoryBipolar Power
Supplier PackageCase U
Standard Package NameModule
Minimum DC Current Gain40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V
Maximum Power Dissipation (mW)600
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA
Description
Trans GP BJT NPN 15V 6-Pin Case U
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