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MJD31CTF
MJD31CTF
GP BJT MJD31CTF
onsemi
MJD31CTF
--
Diodes, Transistors and Thyristors
GP BJT
MJD31CTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@1A@4V|10@3A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.2@375mA@3A
Description
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R
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