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2N5015
2N5015
GP BJT 2N5015
Microchip Technology
2N5015
--
Diodes, Transistors and Thyristors
GP BJT
2N5015.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain10@5mA@10V|30@20mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)1000
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Base Emitter Saturation Voltage (V)1@5mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)1.8@5mA@20mA
Description
Trans GP BJT NPN 0.2A 1000mW 3-Pin TO-5 Bag
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