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2N2779
2N2779
GP BJT 2N2779
Microchip Technology
2N2779
--
Diodes, Transistors and Thyristors
GP BJT
2N2779.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingStud
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width22.23(Max)
Package Height26.16(Max)
Package Length25.65(Max)
Product CategoryBipolar Power
Supplier PackageTO-63
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)30
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)1.5@5mA@25mA
Description
Trans GP BJT NPN 250V 30A 3-Pin TO-63
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