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2N5153S1
2N5153S1
GP BJT 2N5153S1
STMicroelectronics
2N5153S1
--
Diodes, Transistors and Thyristors
GP BJT
2N5153S1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width10.16
Package Height2.62
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Standard Package NameSMD
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@5A@5V|70@2.5A@5V|50@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)35000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@0.25A@2.5A|2.2@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.5A@5A
Description
Trans GP BJT PNP 80V 5A 35000mW 3-Pin SMD-0.5 T/R
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