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JANTXV2N3506AU4
JANTXV2N3506AU4
GP BJT JANTXV2N3506AU4
Microchip Technology
JANTXV2N3506AU4
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.91(Max)
Package Length3.94(Max)
Product CategoryBipolar Power
Supplier PackageCase U4
Minimum DC Current Gain25@500mA@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.3@150mA@1.5A|2@250mA@2.5A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|1@150mA@1.5A|1.5@250mA@2.5A
Description
Trans GP BJT NPN 40V 3A 1000mW 3-Pin Case U4 Tray
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