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2N5323
2N5323
GP BJT 2N5323
Microchip Technology
2N5323
--
Diodes, Transistors and Thyristors
GP BJT
2N5323.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain40@500mA@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)10000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)1.2@50mA@500mA
Description
Trans GP BJT PNP 50V 2A 10000mW 3-Pin TO-5
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