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2N5550
2N5550
GP BJT 2N5550
onsemi
2N5550
--
Diodes, Transistors and Thyristors
GP BJT
2N5550.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@1mA@5V|60@10mA@5V|20@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)140
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1.2@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.25@5mA@50mA
Description
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Box
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