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GP BJT 2N5551RL1G (CUT T&R)
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2N5551RL1G (CUT T&R)
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Transition Frequency (MHz) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
| Description |
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