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2N5686G
2N5686G
GP BJT 2N5686G
onsemi
2N5686G
--
Diodes, Transistors and Thyristors
GP BJT
2N5686G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length38.86
Product CategoryBipolar Power
Supplier PackageTO-204
Standard Package NameTO-3
SVHC Exceeds ThresholdYes
Minimum DC Current Gain15@25A@2V|5@50A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Maximum DC Collector Current (A)50
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)2000000
Maximum Base Emitter Saturation Voltage (V)2@2.5A@25A
Maximum Collector-Emitter Saturation Voltage (V)1@2.5A@25A|5@10A@50A
Description
Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray
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