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BD13510S
BD13510S
GP BJT BD13510S
onsemi
BD13510S
--
Diodes, Transistors and Thyristors
GP BJT
BD13510S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain63@150mA@2V|25@5mA@2V|25@0.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 45V 1.5A 3-Pin(3+Tab) TO-126 Bulk
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