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2N5962
2N5962
GP BJT 2N5962
onsemi
2N5962
--
Diodes, Transistors and Thyristors
GP BJT
2N5962.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain450@10uA@5V|500@100uA@5V|550@1mA@5V|600@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)2
Maximum Collector-Emitter Saturation Voltage (V)0.2@0.5mA@10mA
Description
Trans GP BJT NPN 45V 0.1A 625mW 3-Pin TO-92 Bulk
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