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2N6315
2N6315
GP BJT 2N6315
Microchip Technology
2N6315
--
Diodes, Transistors and Thyristors
GP BJT
2N6315.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Maximum DC Collector Current (A)7
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)2@1.75mA@2.5mA
Description
Trans GP BJT NPN 60V 7A 115000mW 3-Pin(2+Tab) TO-66 Tray
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