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GP BJT ZXT4M322TA
Diodes Incorporated
ZXT4M322TA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 2 |
| Package Height | 0.95(Max) |
| Package Length | 2 |
| Product Category | Bipolar Power |
| Supplier Package | MLP EP |
| Minimum DC Current Gain | 300@10mA@5V|300@100mA@5V|175@1A@5V|40@1.5A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum DC Collector Current (A) | 2.5 |
| Maximum Emitter Base Voltage (V) | 7.5 |
| Maximum Collector Base Voltage (V) | 70 |
| Maximum Transition Frequency (MHz) | 180(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Base Emitter Saturation Voltage (V) | 1.05@200mA@1.5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.05@10mA@0.1A|0.2@20mA@0.5A|0.22@100mA@1A|0.26@200mA@1.5A |
| Description |
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