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2N6382
2N6382
GP BJT 2N6382
Microchip Technology
2N6382
--
Diodes, Transistors and Thyristors
GP BJT
2N6382.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MountingStud
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width22.23(Max)
Package Height26.16(Max)
Package Length25.65(Max)
Product CategoryBipolar Power
Supplier PackageTO-63
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Maximum DC Collector Current (A)50
Maximum Collector-Emitter Voltage (V)120
Maximum Collector-Emitter Saturation Voltage (V)1.2@2mA@20mA
Description
Trans GP BJT PNP 120V 50A 3-Pin TO-63
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