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2N6517
2N6517
GP BJT 2N6517
onsemi
2N6517
--
Diodes, Transistors and Thyristors
GP BJT
2N6517.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@1mA@10V|30@10mA@10V|30@30mA@10V|20@50mA@10V|15@100mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)0.75@1mA@10mA|0.85@2mA@20mA|0.9@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA|0.3@1mA@10mA
Description
Trans GP BJT NPN 350V 0.5A 625mW 3-Pin TO-92 Box
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