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2N6517BU
2N6517BU
GP BJT 2N6517BU
onsemi
2N6517BU
--
Diodes, Transistors and Thyristors
GP BJT
2N6517BU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain20@1mA@10V|30@10mA@10V|30@30mA@10V|20@50mA@10V|15@100mA@10V
Maximum Base Current (A)0.25
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)350
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)0.75@1mA@10mA|0.85@2mA@20mA|0.9@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA
Description
Trans GP BJT NPN 350V 0.5A 625mW 3-Pin TO-92 Bag
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