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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3868
JAN2N3868
GP BJT JAN2N3868
Microchip Technology
JAN2N3868
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3868.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain35@500mA@1V|30@1.5A@2V|20@2.5A@3V|20@3A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.4@150mA@1.5A|2@250mA@2.5A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|0.75@150mA@1.5A|1.5@250mA@2.5A
Description
Trans GP BJT PNP 60V 3A 1000mW 3-Pin TO-5 Bag
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