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2N6519TA
2N6519TA
GP BJT 2N6519TA
onsemi
2N6519TA
--
Diodes, Transistors and Thyristors
GP BJT
2N6519TA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
Lead ShapeFormed
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain45@30mA@10V|40@50mA@10V|20@100mA@10V|30@1mA@10V|45@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)0.75@1mA@10mA|0.9@3mA@30mA|0.85@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA
Description
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Ammo
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