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2SA1406E
2SA1406E
GP BJT 2SA1406E
onsemi
2SA1406E
--
Diodes, Transistors and Thyristors
GP BJT
2SA1406E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7
Package Height11
Package Length8
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain100@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)200
Maximum Transition Frequency (MHz)400(Typ)
Maximum Operating Temperature (°C)150
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)0.8@3mA@30mA
Description
Trans GP BJT PNP 200V 0.1A 1200mW 3-Pin TO-126
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