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MMBT489LT1G
MMBT489LT1G
GP BJT MMBT489LT1G
onsemi
MMBT489LT1G
--
Diodes, Transistors and Thyristors
GP BJT
MMBT489LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain300@50mA@5V|300@500mA@5V|200@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)710
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.1@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.075@1mA@0.1A|0.125@50mA@0.5A|0.2@100mA@1A
Description
Trans GP BJT NPN 30V 1A 710mW 3-Pin SOT-23 T/R
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