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2SA2012-TD-E
2SA2012-TD-E
GP BJT 2SA2012-TD-E
onsemi
2SA2012-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
2SA2012-TD-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)350(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.2@30mA@1.5A
Maximum Collector-Emitter Saturation Voltage (V)0.21@30mA@1.5A|0.26@125mA@2.5A
Description
Trans GP BJT PNP 30V 5A 1300mW 4-Pin(3+Tab) SOT-89 T/R
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