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2SB1122T-TD-E
2SB1122T-TD-E
GP BJT 2SB1122T-TD-E
onsemi
2SB1122T-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 50V 1A 500mW 4-Pin(3+Tab) SOT-89 T/R
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