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2N3440
2N3440
GP BJT 2N3440
Microchip Technology
2N3440
--
Diodes, Transistors and Thyristors
GP BJT
2N3440.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain40@20mA@10V|30@2mA@10V|10@0.2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Collector Cut-Off Current (nA)2000
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 250V 1A 10000mW 3-Pin TO-39 Bag
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