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2SB1205T-E
2SB1205T-E
GP BJT 2SB1205T-E
onsemi
2SB1205T-E
--
Diodes, Transistors and Thyristors
GP BJT
2SB1205T-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.3
Package Height5.5
Package Length6.5
Product CategoryBipolar Power
Supplier PackageTP
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)320(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Base Emitter Saturation Voltage (V)1.3@60mA@3A
Maximum Collector-Emitter Saturation Voltage (V)0.5@60mA@3A
Description
Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
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