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2SB709A-R
2SB709A-R
GP BJT 2SB709A-R
Panasonic
2SB709A-R
--
Diodes, Transistors and Thyristors
GP BJT
2SB709A-R.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSSupplier Unconfirmed
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width1.5
Package Height1.1
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageMini3-G1
Standard Package NameSOT
Minimum DC Current Gain210@2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@100mA
Description
Trans GP BJT PNP 45V 0.1A 200mW 3-Pin Mini3-G1
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