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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3250A
JAN2N3250A
GP BJT JAN2N3250A
Microchip Technology
JAN2N3250A
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3250A.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain40@0.1mA@1V|45@1mA@1V|50@10mA@1V|15@50mA@1V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)0.9@1mA@10mA|1.2@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@1mA@10mA|0.5@5mA@50mA
Description
Trans GP BJT PNP 60V 0.2A 360mW 3-Pin TO-39 Bag
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