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2SB815-6-TB-E
2SB815-6-TB-E
GP BJT 2SB815-6-TB-E
onsemi
2SB815-6-TB-E
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.65(Max)
Package Height1.25(Max)
Package Length3.05(Max)
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain200@50mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.7
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)250(Typ)
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)15
Maximum Collector-Emitter Saturation Voltage (V)0.025@0.5mA@5mA|0.8@10mA@100mA
Description
Trans GP BJT PNP 15V 0.7A 200mW 3-Pin SC-59 T/R
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