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2SC4027T-H
2SC4027T-H
GP BJT 2SC4027T-H
onsemi
2SC4027T-H
--
Diodes, Transistors and Thyristors
GP BJT
2SC4027T-H.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.3
Package Height5.5
Package Length6.5
Product CategoryBipolar Power
Supplier PackageTP
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@50mA@500mA
Description
Trans GP BJT NPN 160V 1.5A 1000mW 3-Pin(3+Tab) TP Bag
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