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2SC4614T-AN
2SC4614T-AN
GP BJT 2SC4614T-AN
onsemi
2SC4614T-AN
--
Diodes, Transistors and Thyristors
GP BJT
2SC4614T-AN.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.5
Package Height4.5
Package Length6.9
Product CategoryBipolar Power
Supplier PackageNMP
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)160
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@50mA@500mA
Description
Trans GP BJT NPN 160V 6A 1000mW 3-Pin NMP T/R
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