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2SD1207S-AE
2SD1207S-AE
GP BJT 2SD1207S-AE
onsemi
2SD1207S-AE
--
Diodes, Transistors and Thyristors
GP BJT
2SD1207S-AE.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.7
Package Height8.5
Package Length6
Product CategoryBipolar Power
Supplier PackageCase MP
Minimum DC Current Gain140@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.4@50mA@1A
Description
Trans GP BJT NPN 50V 2A 1000mW Automotive 3-Pin Case MP T/R
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