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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SD1621S-TD-E
2SD1621S-TD-E
GP BJT 2SD1621S-TD-E
onsemi
2SD1621S-TD-E
--
Diodes, Transistors and Thyristors
GP BJT
2SD1621S-TD-E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@75mA@1.5A
Maximum Collector-Emitter Saturation Voltage (V)0.4@75mA@1.5A
Description
Trans GP BJT NPN 25V 2A 1300mW 4-Pin(3+Tab) SOT-89
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