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2SD1683T
2SD1683T
GP BJT 2SD1683T
onsemi
2SD1683T
--
Diodes, Transistors and Thyristors
GP BJT
2SD1683T.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.3
Package Height11
Package Length8
Product CategoryBipolar Power
Supplier PackageTO-126ML
Standard Package NameTO-225-AA
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@100mA@2A
Description
Trans GP BJT NPN 50V 4A 1500mW 3-Pin TO-126ML Bag
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