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2SD826G
2SD826G
GP BJT 2SD826G
onsemi
2SD826G
--
Diodes, Transistors and Thyristors
GP BJT
2SD826G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7
Package Height11
Package Length8
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain280@0.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Base Emitter Saturation Voltage (V)1.5@60mA@3A
Maximum Collector-Emitter Saturation Voltage (V)0.5@60mA@3A
Description
Trans GP BJT NPN 20V 5A 1000mW 3-Pin TO-126
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