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GP BJT 2STX1360-AP
STMicroelectronics
2STX1360-AP
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Formed |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 3.94(Max) |
| Package Height | 4.95(Max) |
| Package Length | 4.95(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-92 |
| Standard Package Name | TO-92 |
| Minimum DC Current Gain | 80@100mA@2V|160@1A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 130(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@2A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@100mA@2A|0.5@150mA@3A |
| Description |
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