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GP BJT BC327-025G ON Semiconductor Amplifier Transistor
onsemi
BC327-025G ON Semiconductor Amplifier Transistor
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Bulk |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 4.19(Max) |
| Package Height | 5.33(Max) |
| Package Length | 5.2(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-92 |
| Standard Package Name | TO-92 |
| Minimum DC Current Gain | 160@100mA@1V|40@300mA@1V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1500 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Transition Frequency (MHz) | 260(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.7@50mA@500mA |
| Description |
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