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BC638,126
BC638,126
GP BJT BC638,126
NXP
BC638,126
--
Diodes, Transistors and Thyristors
GP BJT
BC638,126.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Minimum DC Current Gain63@150mA@2V|63@5mA@2V|40@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 60V 1A 830mW 3-Pin TO-92 Ammo
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