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BC640,126
BC640,126
GP BJT BC640,126
NXP
BC640,126
--
Diodes, Transistors and Thyristors
GP BJT
BC640,126.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Minimum DC Current Gain40@500mA@2V|63@5mA@2V|63@150mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)145(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 80V 1A 830mW 3-Pin TO-92 Ammo
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