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BC846BW/DG/B3X
BC846BW/DG/B3X
GP BJT BC846BW/DG/B3X
NXP
BC846BW/DG/B3X
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TypeNPN
ECCN (US)EAR99
Part StatusUnconfirmed
ConfigurationSingle
Product CategoryBipolar Small Signal
Minimum DC Current Gain200@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)65
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.9(Typ)@5mA@100mA|0.76(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@5mA@100mA|0.2@0.5mA@10mA
Description
Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SC-70
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