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BC848BE6327T
BC848BE6327T
GP BJT BC848BE6327T
Infineon
BC848BE6327T
--
Diodes, Transistors and Thyristors
GP BJT
BC848BE6327T.pdf
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusLTB
ConfigurationSingle
Product CategoryBipolar Small Signal
Minimum DC Current Gain200@2mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)330
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)250(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.5mA@10mA|0.6@5mA@100mA
Description
Trans GP BJT NPN 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R
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