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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MMBTA56LT1G-HFE
MMBTA56LT1G-HFE
GP BJT MMBTA56LT1G-HFE
onsemi
MMBTA56LT1G-HFE
--
Diodes, Transistors and Thyristors
GP BJT
MMBTA56LT1G-HFE.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Description
Trans GP BJT PNP 80V 0.5A 300mW 3-Pin SOT-23 T/R
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