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BC848BWT1G
BC848BWT1G
GP BJT BC848BWT1G
onsemi
BC848BWT1G
--
Diodes, Transistors and Thyristors
GP BJT
BC848BWT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT-323
Minimum DC Current Gain200@2mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.5mA@10mA|0.6@5mA@100mA
Description
Trans GP BJT NPN 30V 0.1A 200mW 3-Pin SC-70 T/R
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