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BCP5516H6327XTSA1
BCP5516H6327XTSA1
GP BJT BCP5516H6327XTSA1
Infineon
BCP5516H6327XTSA1
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusLTB
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT-223
Minimum DC Current Gain25@5mA@2V|100@150mA@2V|25@500mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 60V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
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