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BCP68E6327XT
BCP68E6327XT
GP BJT BCP68E6327XT
Infineon
BCP68E6327XT
--
Diodes, Transistors and Thyristors
GP BJT
BCP68E6327XT.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TypeNPN
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
ConfigurationSingle Dual Collector
Product CategoryBipolar Power
Minimum DC Current Gain85@0.5A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)20
Maximum Collector-Emitter Saturation Voltage (V)0.5@100mA@1A
Description
Trans GP BJT NPN 20V 1A 4-Pin(3+Tab) SOT-223 T/R
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